High energy heavy ion beam lithography in silicon

Autor:	R. R. Greco, Bibhudutta Rout, Gary A. Glass, Elia V. Eschenazi, Alexander D. Dymnikov, Yongqiang Wang, Daniel P. Zachry
Rok vydání:	2007
Předmět:	Nuclear and High Energy Physics Materials science Ion beam Silicon business.industry Analytical chemistry chemistry.chemical_element Isotropic etching Ion Surface micromachining Semiconductor Xenon chemistry business Instrumentation Lithography
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 261:731-735
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2007.04.121
Popis:	As high energy ions travel through a crystalline semiconductor materials they produce damage along the path which results in resistance to some of the wet chemical etching. A series of preliminary experiments have been performed at the Louisiana Accelerator Center (LAC) to examine the feasibility of irradiating high energy (keV–MeV) ions such as protons, xenon and gold through microscale masked structures on crystalline (n-type) Si substrates followed by wet chemical etch with KOH for attaining deep micromachining in Si. The results of these experiments are reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27b82837508ffab86b287812b66e7152 https://doi.org/10.1016/j.nimb.2007.04.121 Zobrazit plný text záznamu Full Text from ScienceDirect