| Autor: |
Aut��s, Gabriel, Isaeva, Anna, Moreschini, Luca, Johannsen, Jens C., Pisoni, Andrea, Mori, Ryo, Zhang, Wentao, Filatova, Taisia G., Kuznetsov, Alexey N., Forr��, L��szl��, Broek, Wouter Van den, Kim, Yeongkwan, Kim, Keun Su, Lanzara, Alessandra, Denlinger, Jonathan D., Rotenberg, Eli, Bostwick, Aaron, Grioni, Marco, Yazyev, Oleg V. |
| Rok vydání: |
2016 |
| Předmět: |
|
| DOI: |
10.48550/arxiv.1606.06192 |
| Popis: |
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $��$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $��$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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