Process technology for the modular integration of CMOS and polysilicon microstructures
| Autor: | Roger T. Howe, Gary K. Fedder, James Bustillo, Clark T.-C. Nguyen |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Fabrication
Materials science Diffusion barrier Passivation business.industry Modular design Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials CMOS Hardware and Architecture Rapid thermal processing Chemical-mechanical planarization Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microsystem Technologies. 1:30-41 |
| ISSN: | 1432-1858 0946-7076 |
| DOI: | 10.1007/bf01367758 |
| Popis: | Modular fabrication of polysilicon surface-micromachined structures after completion of a conventional CMOS electronic process is described. Key process steps include tungsten metallization with contact diffusion barriers, LPCVD oxide and nitride passivation of the CMOS, rapid thermal processing for stress-relief annealing of the structural polysilicon film, implementation of a sacrificial spin-on-glass planarization, and the final microstructure release in hydrofluoric acid. Modularity of the process enables independent modification of either the CMOS or the microstructure process sequences. This technology is used in the fabrication of various types of sensors and actuators. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink