Lithography and radiation chemistry of epoxy containing negative electron resists
| Autor: | Larry F. Thompson, R. D. Heidenreich, Eugene D. Feit |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Glycidyl methacrylate
Materials science Polymers and Plastics business.industry General Chemistry Epoxy Micrography Acceleration voltage chemistry.chemical_compound chemistry Resist visual_art Polymer chemistry Materials Chemistry visual_art.visual_art_medium Cathode ray Optoelectronics business Lithography Beam (structure) |
| Zdroj: | Polymer Engineering and Science. 14:529-533 |
| ISSN: | 1548-2634 0032-3888 |
| DOI: | 10.1002/pen.760140713 |
| Popis: | A class of negative electron-beam resists is described which have excellent lithographic characteristics. The resists are copolymers of glycidyl methacrylate and ethyl acrylate. Their molecular weights, epoxy contents, and polydispersivities can be controlled to give an adjustable range of electron sensitivity and contrast. The copolymers are compared to other epoxy containing, negative electron-beam resists. Micrography of resist profiles generated from a single line scan of the electron beam have been used to illustrate the complex interaction of accelerating voltage of the electron beam and resist contrast on resolution. Optical gratings made from single line scans of the beam have feature sizes less than 300 nm in the resist, etched metals, and dielectrics. |
| Databáze: | OpenAIRE |
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