| Autor: |
Hiromichi Takano, Katsuhiro Yokota, Toshinori Takagi, Masao Kumagai, Masanori Sakaguchi, Kiyohito Hirai, Masanori Watanabe, Akira Shiomi, Haruya Mori |
| Rok vydání: |
1996 |
| Předmět: |
|
| DOI: |
10.1016/b978-0-444-82334-2.50174-x |
| Popis: |
2keV S + ions were implanted into un-doped semi-insulating GaAs wafers with doses of 3×10 13 -3×10 14 cm -2 at room temperature. The samples were annealed at 850-1000°C after encapsulation with an As-doped a-Si:H film. The sheet carrier concentration increased linearly with increasing annealing temperature and implant dose. A high sheet carrier concentration of about 2×10 14 cm -2 was obtained on GaAs annealed at 1000°C after being implanted with a dose of 3×10 14 cm -2 . The implanted S atoms had diffused up to a depth of about 0.05μm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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