Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage

Autor:	Yoshinobu Kawaguchi, Yuh-Renn Wu, Chia-Yen Huang, Shuji Nakamura, Steven P. DenBaars, Yuji Zhao
Rok vydání:	2013
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Substrate (electronics) Forward voltage law.invention Wavelength Optics law Electric field Optoelectronics Red light business Quantum well Diode Light-emitting diode
Zdroj:	Japanese Journal of Applied Physics. 52:08JC08
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.52.08jc08
Popis:	We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (202̄1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (202̄1) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::279044fbcba4e78748d163ddbb53d7f6 https://doi.org/10.7567/jjap.52.08jc08 Zobrazit plný text záznamu