Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform
| Autor: | Elodie Ghegin, Florent Franchin, Antoine Schembri, Lois Sanchez, Philippe Rodriguez, Pierre Brianceau, Fabrice Nemouchi, Laetitia Adelmini, Marie-Christine Roure, David Carrara, Pierrick Cavalie, Elisa Vermande, Karim Hassan, Bertrand Szelag, Christophe Jany, Segolene Olivier |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon photonics Silicon Equivalent series resistance business.industry chemistry.chemical_element 02 engineering and technology Distributed Bragg reflector Atomic and Molecular Physics and Optics Semiconductor laser theory 020210 optoelectronics & photonics chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Electrical and Electronic Engineering Photonics business Ohmic contact |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 25:1-10 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2019.2904445 |
| Popis: | In this paper, we present the hybrid III–V/Si photonic platform developed in CEA-LETI. The overall integration is done in a fully CMOS compatible 200-mm technology, scalable to 300-mm wafers, leveraging the large-scale integration capabilities of silicon photonics. III–V material is integrated on top of a mature silicon photonic front-end wafer through direct molecular bonding enabling the monolithic integration of light sources. DFB and distributed Bragg reflector (DBR) laser reference designs are used as test vehicles for the process validation. A modular approach is used in order to minimize the impact on the already qualified silicon-based devices. Collective III–V die bonding is proposed in this platform. CMOS compatible metallizations are used to form ohmic contact on n-InP and P-InGaAs leading to contact resistivity in the range of 10−6 Ω·cm². A planarized two-metal-level BEOL is used to connect the device, leading to a drastic reduction of series resistance. Finally, the functionality of both types of lasers is demonstrated with SMSR up to 50 dB and maximum output power of 5 mW. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|