Ionization potential dependent air exposure effect on the MoO3/organic interface energy level alignment
| Autor: | Dong Ge Ma, Hongying Mao, Wei Chen, Jia Lin Zhang, Jiadan Lin, Yong Biao Zhao, Jian-Qiang Zhong, Rong Wang |
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| Rok vydání: | 2012 |
| Předmět: |
Chemistry
Analytical chemistry General Chemistry Substrate (electronics) Electronic structure Condensed Matter Physics Synchrotron Electronic Optical and Magnetic Materials law.invention Biomaterials X-ray photoelectron spectroscopy law Materials Chemistry Molecule Electrical and Electronic Engineering Ionization energy HOMO/LUMO Ultraviolet photoelectron spectroscopy |
| Zdroj: | Organic Electronics. 13:2793-2800 |
| ISSN: | 1566-1199 |
| Popis: | We reported an ionization potential (IP) dependent air exposure effect on the MoO3/organic interface energy level alignment by carrying out in situ ultraviolet photoelectron spectroscopy and synchrotron light based X-ray photoelectron spectroscopy investigations. The electronic structures at MoO3/organic interfaces comprising various pi-conjugated small organic molecules with different IP on MoO3 substrate have been systematically investigated. For the molecules with low IP, MoO3/organic interface electronic structures remained almost unchanged after air exposure. In contrast, for the molecules with high IP, the highest occupied molecular orbital (HOMO) leading edge (or hole injection barrier) increases gradually with the increasing molecule IP after air exposure. For the MoO3/copper-hexadecafluorophthalocyanine (F16CuPc, IP: similar to 6.58 eV) interface, air exposure can induce a significant downward shift of the HOMO level as large as similar to 0.80 eV. (C) 2012 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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