| Autor: |
Y.G. Lian, King-Ning Tu, Kang L. Wang, G.Z. Pan, R.P. Ostroumov |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.. |
| Popis: |
We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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