Neutron transmutation doped far-infrared p-Ge laser
| Autor: | E.W. Nelson, William G. Vernetson, Andrei V. Muravjov, Elena Flitsiyan, Robert E. Peale, T. W. Du Bosq, C. J. Fredricksen, M. V. Dolguikh, S. H. Kleckley |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Doping Physics::Optics General Physics and Astronomy chemistry.chemical_element Germanium Laser law.invention Semiconductor laser theory Ionized impurity scattering chemistry Far infrared law Condensed Matter::Superconductivity Optoelectronics Neutron business Lasing threshold |
| Zdroj: | Journal of Applied Physics. 96:1-6 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1753659 |
| Popis: | A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison. |
| Databáze: | OpenAIRE |
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