c-Axis oriented ScAlN/SiO2 multilayer BAW transformer for rectifying antenna applications
| Autor: | Takahiko Yanagitani, Kota Izumi |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Energy conversion efficiency 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Piezoelectricity law.invention Rectenna law 0103 physical sciences Equivalent circuit Optoelectronics 0210 nano-technology Transformer business 010301 acoustics Energy harvesting Diode Voltage |
| Zdroj: | 2020 IEEE International Ultrasonics Symposium (IUS). |
| DOI: | 10.1109/ius46767.2020.9251603 |
| Popis: | Energy harvesting from surrounding electromagnetic wave is attractive for IoT passive sensor platform. A rectifying antenna (rectenna), which is composed of antenna and diode, is generally used for RF-DC conversion in energy harvesting systems. voltage-boosting devices should be integrated into rectennas for high conversion efficiency. We have previously reported the bulk acoustic wave (BAW) transformer based on c-axis zig-zag multilayers ScAlN film in order to use as a voltage-boosting device in the rectenna. However, it is tough to grow this multilayer in a large area for the present. In this study, we introduce a new type of BAW transformer based on alternate layers of piezoelectric and non-piezoelectric thin films, which can be fabricated in a large area easily by using common sputtering systems. BAW transformers, which were based on 4 layers ScAlN/ SiO2 film were fabricated. ScAlN thin films were used as piezoelectric layers and SiO2 thin films were used as non-piezoelectric layers. The experimental voltage gain was calculated using S parameters of the BAW transformer measured by a network analyzer (E5071C). The theoretical voltage gain was simulated by Mason's equivalent circuit model. As a result, voltage gain approaching +9.5dB with the 4 layers BAW transformer was obtained. This structure is suitable for BAW transformer applications. |
| Databáze: | OpenAIRE |
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