Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
Autor: | A. E. Zhukov, Mikhail V. Maximov, N. A. Kalyuzhnyy, A. S. Payusov, S. Rouvimov, S. A. Mintairov, A. M. Nadtochiy, Yu. M. Shernyakov |
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Rok vydání: | 2015 |
Předmět: |
education.field_of_study
Materials science Photoluminescence Condensed Matter::Other business.industry Population Physics::Optics Heterojunction Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Quantum dot law Optoelectronics Emission spectrum business education Vicinal |
Zdroj: | Semiconductors. 49:1090-1094 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s106378261508014x |
Popis: | Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered. |
Databáze: | OpenAIRE |
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