ChemInform Abstract: Thermal Stability of W-Contacted Junction Diodes

Autor:	Mou Shiung Lin, Wen Kuan Yeh, Mao-Chieh Chen, Kuang Yang Chan, Ting-Chang Chang
Rok vydání:	2010
Předmět:	Work (thermodynamics) Chemical engineering Chemistry Sputtering chemistry.chemical_element Thermal stability cardiovascular diseases General Medicine Chemical vapor deposition Tungsten p–n junction Oxygen Diode
Zdroj:	ChemInform. 27
ISSN:	0931-7597
DOI:	10.1002/chin.199641253
Popis:	This work investigates the thermal stability of W-contacted pn junction diodes, in which the tungsten contact was formed by selective chemical vapor deposition (CVD) or sputtering process. Reaction of Al and CVD-W at elevated temperature leads to the formation of WA112, and the barrier capability of CVD-W film was dependent on the consumption of W. The sputter-W film has a colunmar structure and contains a higher content of oxygen. The presence of oxygen
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::276202c4d371ca119f27ab8a750ddbf6 https://doi.org/10.1002/chin.199641253 Zobrazit plný text záznamu Plný text