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Research in doping processes of ternary chalcopyrites A 2 B 4 C 2 5 is of primary interest for several reasons. First of all, a study of the dependencies of ‘the properties of crystal vs. the concentration of impurity in melt’ decides a fundamental problem. It is a check on the theory of ordering of a crystal structure for some specifically defined values of dopant concentration leading to a possible phase transformation caused by the self-organization of large-scale fluctuations in a melt. On the other hand, it is necessary also for practical tasks—for example, obtaining high-resistance CdGeAs 2 -crystals for use in nonlinear optics. In the present work data on electrical activity and on an effect in the electrophysical properties of ternary semiconductors CdGeAs 2 and CdSnAs 2 are obtained for dopants of Au, Cu, Zn, In, Sc and Gd in CdGeAs 2 and for Au, Cu and In in CdSnAs 2 , added to a melt during synthesis or recrystallization of a material. |
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