Thermoelectric and Transport Properties of n-type Palladium-Doped Chalcopyrite Cu1−xPdxFeS2 Compounds
| Autor: | Cestmir Drasar, T. Plecháček, J. Kašparová, Zuzana Olmrová-Zmrhalová, Jiří Navrátil, Ludvík Beneš, V. Kucek |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Free electron model Materials science Solid-state physics Chalcopyrite Doping Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry visual_art Phase (matter) 0103 physical sciences Thermoelectric effect Materials Chemistry visual_art.visual_art_medium Electrical and Electronic Engineering Solubility 0210 nano-technology Palladium |
| Zdroj: | Journal of Electronic Materials. 48:1795-1804 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Semiconducting CuFeS2 with a diamond-like structure has been recently studied as a potential candidate for thermoelectric applications. In the present study, Pd substitution for Cu was examined in terms of thermoelectric properties. A series of Pd-doped Cu1−xPdxFeS2 (x = 0–0.1) samples were synthesized. The thermoelectric and transport properties of hot-pressed sample pellets were characterized. We observed three effects: (1) Pd substituted for Cu behaves as an effective donor, increasing the free electron concentration. (2) Formation of the foreign phase—PdS—was observed above the solubility limit of Pd in CuFeS2 (x ≥ 0.02). (3) Segregation of the foreign phase is accompanied by the formation of $$ {\hbox{Fe}}_{\rm{Cu}}^{2 + } $$ antisite defects. All these effects synergically enhanced both the power factor S2·σ and the thermoelectric parameter ZT. The highest values of the power factor (∼ 1 mW m−1 K−1) and the ZT parameter (∼ 0.19 at 573 K) were achieved in the Cu0.9Pd0.1FeS2 sample. |
| Databáze: | OpenAIRE |
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