A 24.4 ppm/°C Voltage Mode Bandgap Reference With a 1.05V Supply
Autor: | Srikar Bhagavatula, R. Nagulapalli, Rakesh Kumar Palani |
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Rok vydání: | 2021 |
Předmět: |
Physics
Bandgap voltage reference business.industry Transistor Electrical engineering 020206 networking & telecommunications Line regulation Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology law.invention 03 medical and health sciences 0302 clinical medicine Reference circuit Current mirror CMOS law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Resistor business 030217 neurology & neurosurgery Voltage |
Zdroj: | IEEE Transactions on Circuits and Systems II: Express Briefs. 68:1088-1092 |
ISSN: | 1558-3791 1549-7747 |
DOI: | 10.1109/tcsii.2020.3034256 |
Popis: | This brief proposes a sub-1V, voltage mode CMOS bandgap reference circuit. Conventionally, sub-1V references are obtained by converting PTAT and CTAT voltages to currents and summing them in the current domain. Such techniques have multiple operating points and cannot natively support applications that require PTAT currents in addition to a bandgap voltage. This brief presents a voltage mode reference circuit, which adds a PTAT voltage with a scaled version of a CTAT voltage all within the sub-1V domain. Compared to current mode bandgaps, summing in voltage domain enables reduction of one CTAT current mirror stage and a significant reduction in PTAT current mirror ratio resulting in a reduced number of error sources. In addition, this circuit also natively supports applications that require PTAT current. A novel, high-accuracy self-biasing technique has been adopted to minimize the systematic offset induced temperature coefficient. A prototype designed in 45nm TSMC CMOS technology for a nominal voltage of 500mV demonstrates 24.4ppm/°C temperature coefficient from −40°C to 125°C, 0.15% line regulation, and draws $7.2\mu \text{A}$ from a 1.05V supply. |
Databáze: | OpenAIRE |
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