An analytical back gate bias dependent subthreshold swing model for accumulation-mode p-channel SOI MOSFETs
| Autor: | G. Ruan, G.F. Niu |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Silicon business.industry Subthreshold conduction Mode (statistics) Electrical engineering Silicon on insulator chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Swing Condensed Matter Physics Subthreshold slope Electronic Optical and Magnetic Materials Exponential function chemistry Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Hardware_LOGICDESIGN Communication channel |
| Zdroj: | Solid-State Electronics. 38:1805-1810 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(95)00002-b |
| Popis: | An analytical back gate bias dependent subthreshold swing model of the accumulation-mode p -channel SOI MOSFETs is derived using the exponential dependence of the carrier concentrations on the potential through the silicon film. The subthreshold swing is shown to be proportional to the reciprocal of the derivative of the minimum potential through the silicon film with respect to the front gate voltage. The subthreshold swing is compared to that in the enhancement-mode devices, and its dependencies on device parameters and back gate bias are studied. Based on the model, a method of extraction of front and back interface trap densities in these devices from subthreshhold swing is suggested. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect