Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

Autor:	Yusuf U. Tarauni, D. J. Thiruvadigal, Maitama Hotoro, Fatima Salmanu Koki, P. Murugapandiyan
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Electronic Materials. 51:5219-5229
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-022-09767-5
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::273e6266d608eb3fe9d9e842b8acc389 https://doi.org/10.1007/s11664-022-09767-5 Zobrazit plný text záznamu Full text from SpringerLink