SiGe HBT NPN device optimization for RF power amplifier applications

Autor:	R. Previti-Kelly, J. Forsyth, Panglijen Candra, Alvin J. Joseph, H. Lafontaine, Mike McPartlin, M. Doherty
Rok vydání:	2009
Předmět:	Materials science business.industry Amplifier Heterojunction bipolar transistor RF power amplifier Bipolar junction transistor Electrical engineering Integrated circuit Signal Silicon-germanium Power (physics) law.invention chemistry.chemical_compound chemistry law Optoelectronics business
Zdroj:	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
DOI:	10.1109/bipol.2009.5314249
Popis:	This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge retrograde design, one can improve the large signal performance to provide 66.5% Power-Added-Efficiency (PAE) at an output power of 15.4dBm, with 14.1 dB of peak Gain (G p ) and 14.1 dBm P1dB, without degrading BV ceo .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::273bac7bf4dc47e96c402364600d7767 https://doi.org/10.1109/bipol.2009.5314249 Zobrazit plný text záznamu