Numerical optimization of carrier confinement characteristics in (AlxGa1−xN/AlN)SLs/GaN heterostructures

Autor:	Haibo Yin, Cuimei Wang, Jiang Lijuan, Hongling Xiao, Hong Chen, Xiaoliang Wang, Jieqin Ding, Chun Feng
Rok vydání:	2012
Předmět:	Condensed Matter::Materials Science Electron mobility Charge-carrier density Materials science Condensed matter physics Superlattice Heterojunction Electrical and Electronic Engineering Condensed Matter Physics Saturation (magnetic) Induced polarization Electronic Optical and Magnetic Materials
Zdroj:	Physica B: Condensed Matter. 407:3920-3924
ISSN:	0921-4526
Popis:	We present numerical optimization of carrier confinement characteristics in (AlxGa1−xN/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrodinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of AlxGa1−xN/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6 nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27326d13c5d9cb7594c10a2053647935 https://doi.org/10.1016/j.physb.2012.06.031 Zobrazit plný text záznamu Full Text from ScienceDirect