Dry processing of mc-silicon thin-film solar cells on foreign substrates leading to 11% efficiency
Autor: | C. Hebling, C. Schule, S. Schaefer, R. Ludemann |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997. |
DOI: | 10.1109/pvsc.1997.654053 |
Popis: | A dry-chemical solar cell process has been developed by substituting conventional wet etching steps by reactive ion etching. The performance of mc-Si solar cells that have been made by this new technology is comparable to that of conventionally processed cells. Thin-film solar cells have been prepared by applying zone melting recrystallisation of CVD-grown, highly doped p/sup +/-Si layers, that were used as seeding layers for the growth of the active Si-layers. Graphite with two kinds of encapsulation have been used as a foreign substrate for the silicon deposition: (a) covered with conducting SiC, the graphite acts as base contact of the cells; and (b) graphite encapsulated with insulating SiC- and SiO/sub 2//SiN/SiO/sub 2/-layers (ONO) leads to solar cells on insulating foreign substrates, with front side base contact. The graphite/SiC/Si layer system was developed by ASE; ONO deposition and recrystallisation were realised at Fraunhofer ISE. Applying the authors' dry solar cell technology, conversion efficiencies up to 11% were achieved. |
Databáze: | OpenAIRE |
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