Anomalous electrical and optical characteristics of GaAs/AlxGa1−xAs heterostructure materials

Autor:	T. Ambridge, R. M. Redstall, J. L. Stevenson, B. Wakefield
Rok vydání:	1979
Předmět:	X-ray absorption spectroscopy Materials science Physics and Astronomy (miscellaneous) business.industry chemistry.chemical_element Crystal growth Germanium Cathodoluminescence Heterojunction Conductivity Epitaxy chemistry Optoelectronics Charge carrier business
Zdroj:	Applied Physics Letters. 35:347-349
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.91125
Popis:	GaAs/AlxGa1−xAs double‐heterostructure layers grown by conventional LPE have been examined by three separate electrical and optical techniques. Some material has exhibited characteristics not previously detected in epilayers grown singly. Our central observation is that Ge‐doped passive and active layers can have n‐type conductivity within the heterostructure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2725249f97e4bf1c6d95e2f472347695 https://doi.org/10.1063/1.91125 Zobrazit plný text záznamu