Study of thermoelectric properties of indium nitride nanowire
| Autor: | Yuh-Renn Wu, Hung-Hsun Huang, I-Lin Lu |
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| Rok vydání: | 2011 |
| Předmět: |
Electron mobility
Materials science Indium nitride Condensed matter physics Phonon Nanowire Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Thermal conductivity chemistry Electrical resistivity and conductivity Condensed Matter::Superconductivity Seebeck coefficient Thermoelectric effect Materials Chemistry Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering |
| Zdroj: | physica status solidi (a). 208:1562-1565 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201001047 |
| Popis: | In this paper, we studied the thermoelectric properties of a free-standing InN nanowire with wire size ranging from 6 to 100 nm. With elastic continuum model, we calculated the phonon dispersion curves to obtain the phonon group velocity. The Callaway model has been applied to obtain the temperature-dependent thermal conductivity. We employed the Monte Carlo method to obtain the mobility and electrical conductivity with different doping concentration and temperature. Finally, the figures of merit ZT have been obtained by the combination of the electrical and thermal properties of InN nanowire. Our results suggest that the thermoelectric properties of InN nanowire are strongly influenced by the carrier density, temperature and nanowire size. The optimization condition for designing the thermoelectric device has been studied in this paper. |
| Databáze: | OpenAIRE |
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