Radiation Tolerance of Amorphous Semiconductors

Autor:	S. Defeo, R. Vogel Nicolaides, L. W. Doremus
Rok vydání:	1976
Předmět:	Nuclear and High Energy Physics Materials science business.industry Photoconductivity Neutron radiation Radiation Threshold voltage Amorphous solid Nuclear Energy and Engineering Radiation damage Optoelectronics Neutron Irradiation Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Nuclear Science. 23:839-848
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.1976.4328353
Popis:	In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 1017 nvt in the steady state and 1014 nvt in short (50 ?sec to 16 msec) pulses. Photoconductivity increases by 1? orders of magnitude at the level of 1014 nvt (short pulses of 50 ?sec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90% of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 × 1014 nvt in 50 ?sec pulses.
Databáze:	OpenAIRE
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