Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Autor:	Shuliang Lv, Xianglie Sun, Jun Luo, Wan Xianjin, Yuan Li, Huang Chi
Rok vydání:	2019
Předmět:	Materials science chemistry business.industry Optoelectronics NAND gate chemistry.chemical_element Plasma treatment business Copper Electronic Optical and Magnetic Materials
Zdroj:	ECS Journal of Solid State Science and Technology. 8:P764-P767
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0151912jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2711f4a2ccff8f7b467786512e253b89 https://doi.org/10.1149/2.0151912jss Zobrazit plný text záznamu