Micro FET pressure sensor manufactured using CMOS-MEMS technique

Autor:	Yao-Wei Tai, Pin-Hsu Kao, Chyan-Chyi Wu, Ching-Liang Dai
Rok vydání:	2008
Předmět:	Microelectromechanical systems Fabrication Materials science business.industry General Engineering Nanotechnology Pressure sensor chemistry.chemical_compound CMOS Parylene chemistry Etching (microfabrication) Optoelectronics Field-effect transistor business NMOS logic
Zdroj:	Microelectronics Journal. 39:744-749
ISSN:	0026-2692
DOI:	10.1016/j.mejo.2007.12.015
Popis:	The fabrication of a micro field effect transistor (FET) pressure sensor using the commercial [email protected] complementary metal oxide semiconductor (CMOS) process and a post-process has been investigated. The pressure sensor is composed of 16 sensing cells in parallel, and each sensing cell includes a suspended membrane and an NMOS. The suspended membrane is the movable gate of the NMOS. The pressure sensor needs a post-process to obtain the suspended membrane after the CMOS process. The post-process employs etchants to etch the sacrificial layers to release the suspended membrane, and then a low-pressure chemical vapor deposition (LPCVD) parylene is used to seal the etching holes in the pressure sensor. The pressure sensor produces a change in current when applying a pressure to the sensing cells. Experimental results show that the pressure sensor has a sensitivity of [email protected]/kPa in the pressure range of 0-500kPa.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::27041465a096988c3b0c844cd89cad0d https://doi.org/10.1016/j.mejo.2007.12.015 Zobrazit plný text záznamu Full Text from ScienceDirect