Nd dopant effect on structural properties of BiFeO3 thin films and application in a negative capacitance transistor
| Autor: | Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Chin-Tai Yang, Po-Jui Chang, Fang-Hsing Wang, Ming-Cheng Kao, Hone-Zern Chen |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 62:026502 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | When Nd doping in BiNdFeO (BNFO) film exceeds 10%, the two diffraction peaks (104)/(110) merge into one sharp single peak with increasing addition of Nd. It seems that a phase structural distortion can be obtained due to the substitution of Nd3+ ion for Bi3+ ion. For ferroelectric properties, among all Nd-doped (0%–20%) BiFeO3 capacitors, the BNFO capacitor with 10% Nd doping shows a higher Pr value due to a phase structural distortion and a lower leakage current. In a resistive-capacitive circuit diagram, the transient response of the voltage (V FE) across the BNFO capacitor can be measured. We demonstrate that the capacitance value d Q t d V FE t is negative in the spike interval of V FE(t), with the result that the negative capacitance of BNFO with a 10% Nd doping capacitor can obviously improve the I DS–V GS characteristics of a control thin-film transistor. |
| Databáze: | OpenAIRE |
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