A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance
| Autor: | Fu-Jen Hsu, Chien-Chung Hung, Lurng-Shehng Lee, Kuo-Ting Chu, Chwan-Ying Lee |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Computer science 020208 electrical & electronic engineering Spice Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Capacitance law.invention Nonlinear system Capacitor Parasitic capacitance law 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Waveform Power semiconductor device Hardware_LOGICDESIGN |
| Zdroj: | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). |
| DOI: | 10.1109/wipdaasia49671.2020.9360267 |
| Popis: | SiC MOSFET is one of the most popular power devices in some high-end applications. Since SiC MOSFET has already penetrated into many applications, the requirement of accurate SPICE models is a significant issue for circuit designers. From previous literature, researchers have already exported models that could well-approximate the output characteristics of realistic SiC MOSFETs. Yet, the capacitance models are still based on an exponential model. The mismatching between these rough models and practical devices may induce unpredictable failures. In this work, a simple and accurate SPICE capacitance model for SiC MOSFET has been established by inserting an auxiliary modified function into each capacitor model. Compared to conventional models, dynamic behavior similarity gains significant improvements. Moreover, a switching test has also been done to evaluate the dynamic performance. As a result, the simulated waveform by the proposed method is quite similar to the experimental waveform. In short, this paper provides a better method to match the characteristics of SiC MOSFET by a simple modified capacitance model. |
| Databáze: | OpenAIRE |
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