Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
| Autor: | Sebastian Raabe, Sebastian Franke, Wolfgang Kowalsky, Hassan Gargouri, Matthias Baumkötter, Annemarie Pucci, Carsten Monka, Hans-Hermann Johannes, Sebastian Beck, Reinhard Caspary |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Ozone Chemistry Analytical chemistry chemistry.chemical_element Infrared spectroscopy 02 engineering and technology Surfaces and Interfaces Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen Surfaces Coatings and Films chemistry.chemical_compound Atomic layer deposition 0103 physical sciences Thin film 0210 nano-technology Carbon Water vapor |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:01B117 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4971173 |
| Popis: | Alumina layers were grown from trimethylaluminum (TMA) and water, ozone as well as an oxygen plasma as co-reactants in low temperature spatial atomic layer deposition (ALD). The influence of the amount of precursor, the precursor exposure duration, and substrate temperature were investigated with respect to the growth rate while employing different oxygen sources. The TMA/water process provided alumina (AlOx) films with superb film quality as shown by infrared measurements. Ozone-based processes allowed lower substrate temperatures. Nevertheless, carbon residuals in different binding states were found within the bulk material. However, the carbon impurities have no impact on the barrier performance, since 50 nm AlOx grown by TMA either with water or ozone exhibited a water vapor transition rate in the range of 10−6 g/m2/day. However, when our home-built microwave plasma source was applied in a remote configuration, the water vapor transition rate was one order of magnitude higher due to a reduction in fil... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|