Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

Autor:	Walter Schwarzenbach, Davood Shahrjerdi, Prasanna Khare, Nicolas Loubet, Sebastian Naczas, Kangguo Cheng, Yu Zhu, Cecile Aulnette, Swati Mehta, Bruce B. Doris, T. Yamamoto, Qing Liu, Stefan Schmitz, J. Kuss, Vamsi Paruchuri, Scott Luning, Ghavam G. Shahidi, H. He, Alexander Reznicek, Pouya Hashemi, James Chingwei Li, Thomas N. Adam, Shom Ponoth, Toshiharu Nagumo, S. Holmes, Bich-Yen Nguyen, T. Levin, Ali Khakifirooz, Anita Madan, Raghavasimhan Sreenivasan, J. Gimbert, Mukesh Khare, Frederic Monsieur, Pranita Kulkarni, Nicolas Daval, Z. Zhu
Rok vydání:	2012
Předmět:	Materials science Strain (chemistry) Silicon business.industry Silicon on insulator chemistry.chemical_element Epitaxy Silicon-germanium chemistry.chemical_compound chemistry CMOS Logic gate Electronic engineering Optoelectronics business
Zdroj:	2012 Symposium on VLSI Technology (VLSIT).
Popis:	High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/µm and 1.25mA/µm, and I eff of 0.95mA/µm and 0.70mA/µm at I off =100nA/µm and V DD of 1V, for NFET and PFET, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::26e971d12424a72d4499469a4835d3ed https://doi.org/10.1109/vlsit.2012.6242489 Zobrazit plný text záznamu