Adsorption of group-V elements on III–V (1 1 0) surfaces
| Autor: | Friedhelm Bechstedt, W. Gero Schmidt, G. P. Srivastava |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Schottky barrier Metals and Alloys Nanotechnology Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Overlayer chemistry.chemical_compound Semiconductor Adsorption chemistry Chemisorption Chemical physics Monolayer Gallium phosphide Materials Chemistry business |
| Zdroj: | Surface Science Reports. 25:141-223 |
| ISSN: | 0167-5729 |
| Popis: | Adsorption of group-V elements on III–V (1 1 0) surfaces has led to one of the most extensively investigated overlayer systems. Sb and Bi grow epitaxially on the (1 1 0) surfaces of several III–V semiconductors and show in general a (1 × 1) symmetry for one adsorbed monolayer. The resulting interfaces are atomically sharp and therefore suitable model systems for experimental and theoretical studies of the Schottky barrier formation. In this paper we discuss the present stage of understanding of group-V covered III–V (1 1 0) surfaces. We provide a review of experimental techniques and results, and theoretical approaches applied to these systems. In particular state-of-the-art calculations based on density-functional theory are used to develop a comprehensive picture of the atomic structure, electronic states, vibrational properties, and their accompanying chemical trends. Different stages of the interface formation, from submonolayer coverages to thick overlayers, are considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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