| Autor: |
Zeng-Yuan Wu, Chor Shu Cheng, Tze Ho Chan, Sriram Balasubramanian, Patrick Khoo, Hari Balan, Thanh Hoa Phung |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 Electron Devices Technology and Manufacturing Conference (EDTM). |
| DOI: |
10.1109/edtm.2019.8731313 |
| Popis: |
This work reports a 55nm planar-bulk automotive grade high density (HD) 0.425 $\mu$m2 SRAM cell for use in Ultra Low power (ULP) applications. Excellent Vmin of 0.68V for 95% limited Yield (LY) has been demonstrated on 16Mb array without the use of design assist techniques. The 55ULP HD cell’s standby power is among best in class values reported for foundry offerings. The cell fully qualified the stringent automotive grade 1000 hours of HTOL reliability testing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
