| Autor: |
Antonina Naumenko, V. O. Gubanov, N. E. Kornienko, Sofya B. Artemkina, Vladimir E. Fedorov, L.M. Kulikov |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Springer Proceedings in Physics ISBN: 9783030522674 |
| Popis: |
The research in the influence of graphene-like 2H–MoS2 nanoparticle structure on the behavior electroresistivity and optical properties has shown that the conductivity of semiconductor type (n-type) in the compact samples correlates with the particle sizes, in particular the size of 17–53 nm, along the basal plane [100] at a constant number of S–Mo–S nanolayers (n = 6–8) in graphene-like 2H–MoS2 nanoparticles. The mechanism of conductivity is supposed to be hopping conduction with variable hopping length for 2D case. The results of Raman studies indicate a significant impact of anisotropy sizes of 2H–MoS2 nanoparticles in direction [110] under constant number of nanolayers of S–Mo (W)–S on the formation of the structure-sensitive optical properties and, accordingly, the characteristics of the semiconductor as a whole. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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