Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]
Autor: | Wan Gee Kim, Jung Nam Kim, Jun Young Byun, Sung Ki Park, Moon Sig Joo, Jang Won Oh, Won Kim, Taeh Wan Kim, Byung Gu Gyun, Jae Sung Roh, Jong Hee Yoo, Sook Joo Kim, Chi Ho Kim, Te One Youn, Min Gyu Sung |
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Rok vydání: | 2011 |
Předmět: |
Random access memory
Condensed matter physics Renewable Energy Sustainability and the Environment business.industry Electrical engineering Oxide Type (model theory) Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Transition metal Materials Chemistry Electrochemistry business |
Zdroj: | Journal of The Electrochemical Society. 158:S12 |
ISSN: | 0013-4651 |
Databáze: | OpenAIRE |
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