Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN

Autor:	O S Medvedev, O F Vyvenko, M V N Katrushenko
Rok vydání:	2019
Předmět:	Capacitance voltage History Materials science Condensed matter physics Depletion region Schottky barrier Electric properties Conductance Schottky diode Frequency dependence Computer Science Applications Education Diode
Zdroj:	Journal of Physics: Conference Series. 1190:012008
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1190/1/012008
Popis:	The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes in frequency dependence and in the shape of current-voltage, ac conductance and capacitance voltage characteristics of stripe-like Au-Schottky diodes. Besides, a rapid recovery of the dislocation-induced changes of the electric properties to their initial state was observed after several hours at room temperature indicating the impact of the presence of depletion region of Schottky diodes on the dynamic properties of freshly introduced dislocations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::26c6bd266996e709326b30e6b681a77d https://doi.org/10.1088/1742-6596/1190/1/012008 Zobrazit plný text záznamu