An inductor-coupling resonated CMOS low noise amplifier for 3.1–10.6GHz ultra-wideband system
| Autor: | Chia-Min Chen, Chung-Chih Hung, Zhe-Yang Huang, Che-Cheng Huang, Chun-Chieh Chen |
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| Rok vydání: | 2009 |
| Předmět: |
Power gain
business.industry Computer science Frequency band Amplifier Bandwidth (signal processing) RF power amplifier Electrical engineering Impedance matching Input impedance Noise figure Inductor Low-noise amplifier CMOS Low-power electronics Electronic engineering Return loss Instrumentation amplifier Cascode Wideband business Direct-coupled amplifier Electrical impedance |
| Zdroj: | ISCAS |
| Popis: | In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18um standard RF CMOS process. The UWB LNA gives 10.8dB power gain and 9.4GHz 3dB bandwidth (1.2GHz – 10.6GHz) while consuming only 6.2mW through a 1.2V supply, including output buffer. Over the 3.1GHz – 10.6GHz frequency band, a minimum noise figure of 3.9dB and input return loss lower than −5.7dB have been achieved. |
| Databáze: | OpenAIRE |
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