Characterization of bulk grown GaN and AlN single crystal materials
| Autor: | Buguo Wang, D. Zhuang, Raoul Schlesser, Jie Bai, Michael J. Callahan, Balaji Raghothamachar, Phanikumar Konkapaka, Michael Dudley, Michael G. Spencer, Zlatko Sitar, Rafael Dalmau, Z.G. Herro, Kelly Rakes |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Corundum Crystal growth engineering.material Nitride Condensed Matter Physics Synchrotron law.invention Inorganic Chemistry Crystallography law X-ray crystallography Materials Chemistry engineering Sapphire Optoelectronics Sublimation (phase transition) business Single crystal |
| Zdroj: | Journal of Crystal Growth. 287:349-353 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2005.11.042 |
| Popis: | Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed. |
| Databáze: | OpenAIRE |
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