Simulation of the Electric Properties of a Structure Based on Two Gan P-N Junctions Grown on an Undoped ZnO Nanosheet

Autor:	Zehor Allam, Aicha Soufi, A. Moumene Benahmed, Chahrazad Boudaoud
Rok vydání:	2020
Předmět:	Computer science business.industry Numerical modeling chemistry.chemical_element Photodetector Zinc chemistry Structure based Electric properties Optoelectronics business Layer (electronics) Dark current Nanosheet
Zdroj:	Artificial Intelligence and Renewables Towards an Energy Transition ISBN: 9783030638450
DOI:	10.1007/978-3-030-63846-7_93
Popis:	The present paper introduces the simulation of a photodetector based on a double GaN p-n type junction that was grown on an intrinsic zinc oxide (i-ZnO) layer. The numerical modeling study was carried out using the software Atlas (Silvaco). In addition, the concept of artificial intelligence was introduced for calculating errors in the case of a dark current for a temperature of 250K. The error found was very small; it was within the range extending from 10 −7A to 10 −5A for high potential values.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::26a008ac123a9ba49fc3e744ed994b0b https://doi.org/10.1007/978-3-030-63846-7_93 Zobrazit plný text záznamu