Ion-implanted resist removal using atomic hydrogen
| Autor: | Masashi Yamamoto, Hideo Horibe, Seiichi Tagawa, Takeshi Maruoka, Yousuke Goto, I. Nishiyama, Akihiko Kono |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Hydrogen Scanning electron microscope Inorganic chemistry Metals and Alloys chemistry.chemical_element Nanotechnology Surfaces and Interfaces Charged particle Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Ion implantation Resist chemistry Materials Chemistry Layer (electronics) |
| Zdroj: | Thin Solid Films. 519:4578-4581 |
| ISSN: | 0040-6090 |
| Popis: | We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 × 1012 to 5 × 1015 atoms/cm2 at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B, P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect