Etching behavior of an epoxy film in O2/CF4 plasmas

Autor: Frank D. Egitto, Luis J. Matienzo, F. Emmi
Rok vydání: 1991
Předmět:
Zdroj: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:786-789
ISSN: 1520-8559
0734-2101
DOI: 10.1116/1.577362
Popis: Epoxy polymers are commonly used in microelectronic packaging for printed circuit board fabrication. Exposure to plasma environments occurs during processing for purposes such as drill smear removal, surface modification, and decapsulation. In this investigation, epoxy films made from a brominated diglycidyl ether of bisphenol‐A, containing aliphatic and aromatic segments, were etched in a radio‐frequency plasma using a planar diode configuration. Etching rates were measured at various compositions of O2 and CF4 in the gas feed. Surface composition of etched and nonetched films were compared using x‐ray photoelectron spectroscopy. Comparison of etching behavior and fluorine surface coverage is made with polymers, which are either aliphatic or aromatic. Maxima in etching rates for polyimide, epoxy, and polyethylene films occurred at 22.5%, 35%, and 37.5% CF4 in O2, respectively. Fluorine atom surface coverage was 10%, 20%, and 2%, respectively, under these conditions. It is proposed that the low affinity for fluorine atoms of the aliphatic moieties in the epoxy drives the O2/CF4 gas feed mixture, which yields maximum etching rates toward higher CF4 concentrations, similar to observations made for fully saturated polymers like polyethylene. As a consequence, the aromatic epoxy segments become more heavily fluorinated as occurs for highly aromatic polymers, like polyimide, in fluorine‐rich plasmas.
Databáze: OpenAIRE