High-Remaining Dry-Developed Resist Patterns of Steep Profile
Autor: | Hisashi Nakane, Wataru Kanai, Minoru Tsuda, Ken-ichi Kashiwagi, Setsuko Oikawa, Akira Yokota, Mitsuo Yabuta |
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Rok vydání: | 1983 |
Předmět: | |
Zdroj: | Japanese Journal of Applied Physics. 22:1215 |
ISSN: | 1347-4065 0021-4922 |
DOI: | 10.1143/jjap.22.1215 |
Popis: | A dry developable resist composition which gives a steep profile pattern and high-remaining resist thickness (ca. 90%) is described. The composition comprises poly (methyl isopropenyl ketone), PMIPK, and 4,4'-diazidodiphenyl sulfone. The resist patterns were developed by a well-controlled pure oxygen plasma. The exposure time was 3.6–6.0 sec for a deep UV contact printer and the development time required was 80 sec. A resolution of 0.5 µm of the steep-profiled lines was easily obtained. The photochemical reaction mechanism and some properties of the dry-developed resist pattern are discussed. |
Databáze: | OpenAIRE |
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