Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection

Autor:	John S. Suehle, Eric M. Vogel, Monica D. Edelstein
Rok vydání:	2001
Předmět:	Materials science Silicon business.industry Silicon dioxide Oxide General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Dielectric Stress (mechanics) chemistry.chemical_compound chemistry Electric field MOSFET Optoelectronics business
Zdroj:	Journal of Applied Physics. 90:2338-2346
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1389528
Popis:	Hole-induced bulk and interface defect generation and breakdown in ultrathin silicon dioxide (2.0 and 3.0 nm) are studied using substrate hot-hole injection. The results show that although these substrate hot holes are effective in creating electrically active damage in the dielectrics, these defects are very ineffective in causing breakdown as compared to those defects created by constant voltage tunneling stress. Identical to hole trapping in thicker oxides, substrate hot-hole defect generation was independent of electric field, decreased with decreasing thickness, and increased with decreasing temperature. The defect generation and breakdown of ultrathin oxides by substrate hot-hole stress is significantly different from that observed for constant voltage tunneling stress. The results suggest that the degradation and breakdown of ultrathin silicon dioxide cannot be explained by the trapping of hot holes alone.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::26609e0083af8bd2c4d3ba5f74d7d6fa https://doi.org/10.1063/1.1389528 Zobrazit plný text záznamu