The Scanning Tunneling Microscope Investigation of Grain Boundaries in Silicon
| Autor: | L. E. Polyak, E.A. Stepantsov, G. A. Stepanyan, V. S. Edelman, A. P. Volodin, L. K. Fionova |
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| Rok vydání: | 1991 |
| Předmět: |
Silicon
Misorientation Condensed matter physics business.industry Scanning tunneling spectroscopy chemistry.chemical_element Spin polarized scanning tunneling microscopy Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Optics chemistry law Grain boundary Electric current Scanning tunneling microscope business Crystal twinning |
| Zdroj: | Physica Status Solidi (a). 123:193-199 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2211230118 |
| Popis: | Grain boundaries in silicon are studied by means of scanning tunneling microscopy (STM). The combination of scanning electron microscopy (SEM) and STM makes it possible to study surfaces at the individual interfaces: the morphology of thermal etching groove profiles, the voltage—current characteristics of the tunneling contact, and the potential distribution in the electric current. The grain boundaries with different misorientation parameters (twin and low-angle boundaries) and different electrical activity (passive and active) are investigated. Detailed studies of the complicated shape of the thermal groove on the twin boundary are carried out. It is found that the voltage—current characteristics of the tunneling contact of the boundary and various grains are different. The potential distribution near the boundary with the electric current being in perpendicular direction to it revealed a potential step of width of 2 μm, which corresponds to the electrical width of the grain boundary. [Russian Text Ignored]. |
| Databáze: | OpenAIRE |
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