Retention Studies on Ferroelectric Media for High Data Storage Application

Autor: Inkyung Yoo, Dong-Yung Kim, Seok-Bong Park, Byung-hee Kim
Rok vydání: 1997
Předmět:
Zdroj: MRS Proceedings. 493
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-493-299
Popis: Data retention may be affected by depolarization, domain stabilization (ageing or imprint), and fuzzy electric field among neighboring bits in relation to microstructures of ferroelectric media. In this paper, the smearing effect due to electric field between two adjacent bits was demonstrated. In order to minimize the smearing effect, ferroelectric media with the top electrode is proposed by which fuzzy electric field can be screened by bound charges in the electrode. Bit on electrode (BOE) technique was suggested for “Write” (local polarization) and “Read” on ferroelectric media with the top electrode (ferroelectric capacitor). It is noticed that a highly sensitive device such as single electron transistor is indispensable for measuring potential variation in the top electrode of the ferroelectric capacitor media.
Databáze: OpenAIRE
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