Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

Autor:	Akira Endoh, Koharu Hatori, Naoyuki Kishimoto, Mizuho Hiraoka, Yuta Kemmochi, Yuki Endoh, Koki Osawa, Takuya Hayashi, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu, Hiroki I. Fujishiro
Rok vydání:	2023
Předmět:	Materials Chemistry Surfaces and Interfaces Electrical and Electronic Engineering Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (a). 220
ISSN:	1862-6319 1862-6300
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2648d8930d8e8e7f638f82959198ea67 https://doi.org/10.1002/pssa.202200529 Zobrazit plný text záznamu Plný text