Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer
| Autor: | Stefan Kubicek, Serge Biesemans, K. De Meyer, J. Petry, Henny Volders, Abdelkarim Mercha, Barry O'Sullivan, R. Singanamalla, Vasile Paraschiv, Hao Yu |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage chemistry MOSFET Work function Electrical and Electronic Engineering Metal gate Tin Order of magnitude Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 84:1865-1868 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.04.095 |
| Popis: | We investigate the influence of aluminum oxide (AlO) capping on SiON on the threshold voltage and I"o"n of Poly-Si/TiN gated pMOSFETs. The AlO capping resulted in threshold voltage (V"T) reduction and improvement in drive current (I"o"n) for Poly-Si/TiN/ gated pFETS. The AlO capping on SiON also improved the interface quality making the gate stack more thermally stable. The leakage and reliability characteristics for the Poly-Si/AlO/SiON stacks are evaluated and compared with the uncapped Poly-Si/TiN/SiON reference. The AlO capping resulted in two orders of magnitude decrease in leakage at the same capacitance equivalent thickness (CET) compared to the un-capped Poly-Si/TiN/SiON reference. The AlO capping also resulted in improvement lifetime compared to the un-capped Poly-Si/TiN/SiON reference. |
| Databáze: | OpenAIRE |
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