Applications of nuclear microanalysis to solid state electrochemistry

Autor: B. Agius, S. Rigo, C. Ortega, B. Maurel, D. Dieumegard, G. Velasco, G. Amsel, J. Siejka, M. Croset, J. P. Nadai
Rok vydání: 1972
Předmět:
Zdroj: Journal of Radioanalytical Chemistry. 12:377-378
ISSN: 1588-2780
0134-0719
Popis: The direct observation of nuclear reactions, or o f Rutherford backscattering, induced by charged particles is particularly suitable for the study of surface phenomena. The use of these techniques in various fields like the study of anodic oxidation, passivity phenomena and thin film growth mechanisms was presented. These applications illustrate the usefulness of these analytical techniques in solid state electrochemistry in general. The references, relative to the work of our groups, give a further insight intothe kind of studies which may be performed in this domain. One of the basic tools to study ionic movements near the surface of solids is tracing of oxygen by using ~ 0 enriched compounds. The ~O(p, ~)laN reaction, which presents large cross-sections, is suitable for such studies, both to measure the number of ~ 0 atoms per cm'-' and to locate them as a function of depth. Other nuclei which are routinely determined with these methods in our laboratory with sensitivities down to the order of 101~ atoms per cm 2 are 2H, ~ 7Li, 1~C, 14N, IGO, a~F and ~VAl. Silicon, sulphur, nickel, iron, antimony and other heavier nuclei were determined by backscattering. A paper quoted in Nucl. Instr. M~thods" [92 (1971) 482] contains the latest and most general account of the technical aspects of these methods. Anodic oxidation and transport phenomena under high electric field were studied in detail on aluminium, tantalum, niobium, zirconium and silicon. Short and long range migration of oxygen was observed according to the structure of the oxide films" amorphous or microcrystalline, a~O exchange with labelled solutions allowed to study the electrochemical exchange currents and the ion transfer phenomena at the oxide solution interface. Incorporation of anions from the solutions into the films was established both by the direct determination of r 'C or ~4N and by using salts highly enriched in laO. The origin of oxygen from organic solutions was studied using ~sO enriched compounds. The effect of contamination by fluorine on anodic oxidation was studied both on tantalum and on silicon. Self diffusion phenomena were studied both under high field, in anodic silicon dioxide, and at high temperature, in the same films and in bulk, monocrystalline quartz.
Databáze: OpenAIRE
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