ChemInform Abstract: Silicon Carbide MEMS for Harsh Environments

Autor:	M. Mehregany, N. Rajan, Chien Hung Wu, Christian A. Zorman
Rok vydání:	2010
Předmět:	Microelectromechanical systems chemistry.chemical_compound Silicon chemistry Hardware_GENERAL Silicon carbide chemistry.chemical_element General Medicine Electronics Current (fluid) Material properties Engineering physics
Zdroj:	ChemInform. 30
ISSN:	1522-2667 0931-7597
DOI:	10.1002/chin.199903248
Popis:	Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current stare of SiC MEMS devices and issues facing future progress are presented.
Databáze:	OpenAIRE
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