High gains observed at room temperature in Stark effect tunneling transistors
| Autor: | D.A. Collins, T.C. McGill |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Superlattice Transistor Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science symbols.namesake Stark effect law symbols Optoelectronics business Science technology and society Layer (electronics) Quantum tunnelling Molecular beam epitaxy |
| Zdroj: | International Technical Digest on Electron Devices. |
| DOI: | 10.1109/iedm.1990.237085 |
| Popis: | Summary form only given. Attention is given to a Stark effect transistor in which the emitter-collector current is controlled by a base positioned in such a way to provide a small base current. The reported structure uses a GaSb-InAs-AlSb-GaSb heterostructure that has values for beta vastly exceeding that for any tunnel transistor. The devices reported were fabricated by molecular beam epitaxy on GaAs substrates. The heterostructure device was grown on a thick GaSb layer grown on a superlattice of GaSb-GaAs. The results presented strongly suggest that the Stark effect transistor mechanism as implemented in the GaSb-InAs-AlSb heterojunction system has real promise for providing a device technology for the next generation of ultra-small and ultra-fast transistors. > |
| Databáze: | OpenAIRE |
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