DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
Autor: | J. Kovac, Marek Tłaczała, A. Kosa, Ladislav Harmatha, Wojciech Dawidowski, Lubica Stuchlikova, B. Sciana |
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Rok vydání: | 2018 |
Předmět: |
Deep-level transient spectroscopy
Materials science Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences Metal Impurity 0103 physical sciences General Materials Science 010302 applied physics Atmospheric pressure business.industry Mechanical Engineering Vapour phase epitaxy 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen Semiconductor chemistry Mechanics of Materials visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Indium |
Zdroj: | Materials Science in Semiconductor Processing. 74:313-318 |
ISSN: | 1369-8001 |
DOI: | 10.1016/j.mssp.2017.10.035 |
Popis: | In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of deep energy levels in intentionally undoped InGaAs and GaAsN semiconductor structures. The examined samples, grown by Atmospheric Pressure Metal Organic Vapour Phase Epitaxy on GaAs substrates, were analyzed at various indium and nitrogen concentrations. Main attention was focused on differences in defect distributions, relations in possible composition and growth condition sensitive defect states. Valuable characteristics of particular In/N contents capable to eliminate or reduce specific impurities are discussed. A possible indium dependent dual state InGaAs complex and a nitrogen and growth condition dependent dual type GaAsN complex was introduced/confirmed. The most balanced samples for further utilizations were achieved for In = 8.9% and N = 1%. |
Databáze: | OpenAIRE |
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